Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10547
Title: Line width roughness effects on device performance
Alternative title / Subtitle: the role of the gate width design
Authors: Κωνσταντούδης, Βασίλειος
Γογγολίδης, Ευάγγελος
Πάτσης, Γεώργιος
Item type: Conference publication
Conference Item Type: Poster
Keywords: Semiconductor device;Συσκευή ημιαγωγών;Microelectronics;Μικροηλεκτρονική
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 16-May-2015
16-May-2010
Publisher: ΙΕΕΕ
Abstract: The role of the gate width in the effects of Line Width Roughness (LWR) on transistor performance is investigated. Two mathematical results regarding the statistical nature of LWR are presented and discussed. Exploiting the implications of these results through a 2D modeling approach, we indicate that, for fixed LWR, transistors with large gate widths seem to mitigate the degradation effects of LWR on transistor performance.
Language: English
Citation: Constantoudis, V., Gogolides, E. and Patsis, G. (2010) Line width roughness effects on device performance: the role of the gate width design. In 27th International Conference on Microelectronics. Proceedings. 16th to 19th May 2010. Nis, p.265 - 268
Conference: 27th International Conference on Microelectronics
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10547
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