Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10595
Title: Electron beam lithography simulation for the patterning of extreme ultraviolet masks
Authors: Τσικρικάς, Ν.
Πάτσης, Γεώργιος
Ράπτης, Ιωάννης
Quesnel, E.
Gerardino, Annamaria
Item type: Journal article
Keywords: Applied physics;Multilayer substrates;Πολυστρωματικά υποστρώματα;Εφαρμοσμένη φυσική;Particle beams;Δέσμες σωματιδίων;Energy dissipation;Διάχυση ενέργειας
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 17-May-2015
2008
Abstract: Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo–Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100 nm reproduced experimental metrology trends on the fine features of the layout.
Language: English
Citation: Tsikrikas, N., Patsis, G., Raptis, I., Gerardino, A, and Quesnel, E. (2008) Electron beam lithography simulation for the patterning of extreme ultraviolet masks. "Japanese Journal of Applied Physics", 47 (6)
Journal: Japanese Journal of Applied Physics
Type of Journal: With a review process (peer review)
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10595
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