Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10601
Title: High resolution patterning and simulation on Mo/Si multilayer for EUV masks
Authors: Τσικρικάς, Ν.
Πάτσης, Γεώργιος
Ράπτης, Ιωάννης
Gerardino, Annamaria
Item type: Conference publication
Conference Item Type: Poster
Keywords: Electron beams;Ultraviolet rays;Δέσμες ηλεκτρονίων;Υπεριώδεις ακτίνες;Metrology;Μετρολογία
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 17-May-2015
21-Jan-2008
Publisher: SPIE
Abstract: Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation's accuracy.
Language: English
Citation: Tsikrikas, N., Patsis, G., Raptis, I. and Gerardino, A. (2008) High resolution patterning and simulation on Mo/Si multilayer for EUV masks. In 24th European Mask and Lithography Conference. 21st January 2008. Dresden
Conference: 24th European Mask and Lithography Conference
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10601
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