Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10621
Title: Electron beam lithography simulation for the patterning of EUV masks
Authors: Τσικρικάς, Νικόλαος
Πάτσης, Γεώργιος Π.
Βαλαμόντες, Ευάγγελος Σ.
Ράπτης, Ιωάννης Α.
Gerardino, Annamaria
Item type: Conference publication
Conference Item Type: Poster
Keywords: Electron backscattering;Electron beam lithography;Molybdenum;Nanopatterning;Silicon;Αναδιάχυση ηλεκτρονίων;Λιθογραφία ηλεκτρονικής δέσμης;Μολυβδαίνιο;Πυρίτιο
Subjects: Technology
Electrical engineering
Τεχνολογία
Ηλεκτρολογία Μηχανολογία
Issue Date: 17-May-2015
2007
Publisher: IEEE
Abstract: The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental single pixel and test layout exposures on various Mo/Si stacks are in progress. Simulation accuracy improvement through the incorporation of secondary electrons and comparison of the simulation results with the corresponding experimental ones is in progress.
Language: English
Citation: Tsikrikas, N., Patsis, G.P., Valamontes, E.S., Raptis, I.A. & Gerardino, A. (2007) Electron beam lithography simulation for the patterning of EUV masks, In: Proceedings of the 20th International Microprocesses and Nanotechnology Conference, MNC 2007. Kyoto, Japan. 5-8 November, 2007. [online]. p. 68-69, 4456108. Available from: http://ieeexplore.ieee.org/
Conference: 20th International Microprocesses and Nanotechnology Conference, MNC 2007
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10621
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