Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10622
Title: Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness
Authors: Δρυγιαννάκης, Δ.
Nijkerk, M. D.
Πάτσης, Γεώργιος
Κόκκορης, Γ.
Ράπτης, Ιωάννης
Contributors: Γογγολίδης, Ευάγγελος
Leunissen, L. H. A.
Item type: Conference publication
Conference Item Type: Poster
Keywords: Υπεριώδεις ακτίνες;Ηλεκτρόνια;Λιθογραφία;Ultraviolet rays;Electrons;Lithography
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 17-May-2015
25-Feb-2007
Publisher: SPIE
Abstract: Device shrinking combined with material manipulation under various process conditions becomes a difficult task if specific optimization conditions should be met. Nanolithography is limited by effects as line-edge and line-width roughness (LER and LWR respectively) and secondary electron blur (SEB). Simulation studies could show the direction of solving design for manufacturing problems. In the current article a simulation methodology is presented, based on the concept of stochastic modeling of exposure, material, and process aspects of lithography and pattern transfer with plasma etching in order to get information about the evolution of critical dimensions (CD), LER and LWR in the layout. The study reveals that under certain process conditions, the effect of acid diffusion on LER is more important than the one of SEB, although both deal with blurring, because acid diffusion is supposed to extend in longer radius. However, when resists of low degree of polymerization are used, SEB should also be considered explicitly since the deteriorations from blurring on both LER and CD are enhanced due to the graining nature of the material. In any case, etching smoothing effects of high frequency LER components should be considered in terms of CD loss.
Language: English
Citation: Drygianakis, D., Nijkerk, M.D., Patsis, G., Kokkoris, G., Raptis, I. et al. (2007) Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness. In Advances in Resist Materials and Processing Technology XXIV. 25th February 2007. San Jose
Conference: Advances in Resist Materials and Processing Technology XXIV
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10622
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