Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10628
Title: Stochastic simulation of material and process effects on the patterning of complex layouts
Authors: Τσικρικάς, Ν.
Δρυγιαννάκης, Δ.
Πάτσης, Γεώργιος
Κόκκορης, Γεώργιος
Ράπτης, Ιωάννης
Contributors: Γογγολίδης, Ευάγγελος
Item type: Conference publication
Conference Item Type: Poster
Keywords: Applied physics;Electron beams;Parameter estimation;Lithography;Εφαρμοσμένη φυσική;Δέσμες ηλεκτρονίων;Προσδιορισμός παραμέτρων;Λιθογραφία
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 17-May-2015
25-Feb-2007
Publisher: SPIE
Abstract: The whole process of stochastic lithography simulation combined with an electron-beam simulation module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and process parameters can no more be considered of second order importance in high-density designs. Line-width roughness quantification should accompany CD measurements since it could be a large fraction of the total CD budget. An example of the effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, stochastic simulations for the modeling of resist film, the post-exposure bake, resist dissolution, and a simple analytic model for resist etching. Particular examples of line-width roughness and critical dimension non-uniformity due to, material, and process effects on the gate of a standard CMOS inverter layout are presented.
Language: English
Citation: Tsikrikas, N., Drygiannakis, D., Patsis, G., Kokkoris, G., Raptis, I. et al. (2007) Stochastic simulation of material and process effects on the patterning of complex layouts. In Metrology, Inspection, and Process Control for Microlithography XXI. 25th February 2007. Jan Jose
Conference: Metrology, Inspection, and Process Control for Microlithography XXI
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10628
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