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Title: Stochastic simulation of material and process effects on the patterning of complex layouts
Authors: Τσικρικάς, Ν.
Δρυγιαννάκης, Δ.
Πάτσης, Γεώργιος
Ράπτης, Ιωάννης
Σταυρουλάκης, Σ.
Contributors: Βογιατζής, Ε.
Item type: Journal article
Keywords: Electron beams;Parameter estimation;Surface roughness;Εφαρμοσμένη φυσική;Applied physics;Δέσμες ηλεκτρονίων;Προσδιορισμός παραμέτρων;Τραχύτητα εδάφους
Subjects: Technology
Issue Date: 18-May-2015
Publisher: The Japan society of Applied Physics
Abstract: The whole process of stochastic lithography simulation combined with an electron-beam exposure pattern convolution module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and processing effects would result in even greater feature degradation if not properly controlled. Therefore, material and process parameter can no more be considered of second order importance in proximity effect quantification. Line-width roughness quantification should accompany critical dimension (CD) measurements since it is shown that it could be a large fraction of the total CD in the sub-100 nm length scales. The effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, and the post-exposure bake and resist dissolution. Particular examples of line-width roughness and critical dimension non-uniformity due to proximity, material, and process effects on complex layouts will be investigated.
Language: English
Citation: Tsikrikas, N., Drygiannakis, D., Patsis, G., Raptis, I., Stavroulakis, S. et al. (2007) Stochastic simulation of material and process effects on the patterning of complex layouts. "Japanese Journal of Applied Physics", 46 (9)
Journal: Japanese Journal of Applied Physics
Type of Journal: With a review process (peer review)
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
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