Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/10685
Title: Simulation of material and processing effects on photoresist line-edge roughness
Authors: Πάτσης, Γεώργιος
Nijkerk, M. D.
Leunissen, L. H. A.
Γογγολίδης, Ευάγγελος
Item type: Journal article
Keywords: LER;Nanotechnology;Chemically amplified resistsances;Νανοτεχνολογία;Χημικά ενισχυμένες αντιστάσεις;Photoresistance;Φωτοαντίσταση
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 18-May-2015
2006
Publisher: Interscience Publishers
Abstract: Sub-100 nm device fabrication rules require extremely tight control of Line-Edge Roughness (LER) of patterned structures. During lithographic processes the resist film introduces an initial LER due to its chemical structure and processing. This initial LER evolves during the subsequent etching step. A stochastic simulator is presented which takes into account material and process effects on photoresist LER. Its application in model cases reveals that LER decreases with lower degree of polymerisation, but is sensitive on the acid diffusion process during post exposure bake in Chemically Amplified Resists (CARs). Further simulations confirm that LER can be reduced during etch patterning, at the expense of critical dimension control.
Language: English
Citation: Patsis, G., Nijkerk, M.D., Leunissen, L.H.A. and Gogolides, E. (2006) Simulation of material and processing effects on photoresist line-edge roughness. "International Journal of Computational Science and Engineering", 2 (3), p.134-143
Journal: International Journal of Computational Science and Engineering
Type of Journal: With a review process (peer review)
Access scheme: Embargo
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/10685
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