Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/5021
Title: Study the analysis of low power and high speed CMOS logic circuits in 90nm technology
Authors: Noorbasha, Fazal
Verma, Ashish
Mahajan, A.M.
Item type: Conference publication
Keywords: Inverter;Αντιστροφέας;Low power;High speed;CMOS;90nm technology;Χαμηλή ισχύς;Υψηλή ταχύτητα;Τεχνολογία 90nm
Subjects: Technology
Electronics
Τεχνολογία
Ηλεκτρονική
Issue Date: 29-Jan-2015
2010
Date of availability: 29-Jan-2015
Publisher: Νερατζής, Ηλίας
Σιανούδης, Ιωάννης
Abstract: This paper describes the parameter and characteristic analysis of Low power and High speed CMOS Logic Circuits in 90nm Technology. The proposed CMOS logic circuits consists only logic gates. CMOS circuit is fabricated in 0.12µm and 90nm CMOS technology. The supply voltage is 1.20V. The temperature was 27ºC. We observed Inverter (NOT gate) properties - MOS, Capacitance, Resistance, Inductance and Clock. These layouts can store in the form of semi-custom library to make full-custom SoC designs.
Language: English
Citation: Noorbasha, F., Verma, A. and Mahajan, A.M. (2010). Study the analysis of low power and high speed CMOS logic circuits in 90nm technology. "e-Journal of Science & Technology". [Online] 5(1): 43-50. Available from: http://e-jst.teiath.gr/
Journal: e-Περιοδικό Επιστήμης & Τεχνολογίας
e-Journal of Science & Technology
Type of Journal: With a review process (peer review)
Access scheme: Publicly accessible
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/5021
Appears in Collections:Τόμος 05, τεύχος 1 (2010)

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