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Title: Thermally activated conduction mechanisms in silicon nitride MIS structures
Authors: Καναπίτσας, Αθανάσιος
Τσώνος, Χρήστος
Τριάντης, Δήμος Α.
Σταύρακας, Ηλίας
Αναστασιάδης, Κίμων
Contributors: Φωτόπουλος, Παναγιώτης
Πίσσης, Πολύκαρπος
Βαμβακάς, Βασίλης Ε.
Item type: Journal article
Keywords: Silicon nitride;Conduction mechanisms;TSDC;DC conductivity;Nιτρίδιο του πυριτίου;Mηχανισμοί αγωγιμότητας;DC αγωγιμότητα
Subjects: Science
Issue Date: 5-Apr-2015
Date of availability: 4-Apr-2015
Publisher: Elsevier
Abstract: This publication reports on thermally activated currents in n-silicon/Si3N4/Al structures. The samples prepared were examined by means of I–V, C–V, ac conductivity and thermally stimulated depolarisation current (TSDC) measurements. The results indicate that DC conductivity is controlled by charge diffusion. Both conductivity and TSDC measurements indicate that mobile carriers which are trapped at the Si/nitride interface for low temperatures are de-trapped when temperature approaches room temperature resulting in a fast increase of DC conductivity. Additionally it is found that at high temperatures the ac conductivity follows a power law with respect to frequency where the exponent is close to two. Implications of this type of variation are also discussed. The results were used in order to explain the contribution of defects to the conduction mechanisms and the device behaviour.
Language: English
Citation: KANAPITSAS, A., TSONOS, C., TRIANTIS, D.A., STAVRAKAS, I., ANASTASIADIS, C. ET AL. (2010). Thermally activated conduction mechanisms in silicon nitride MIS structures. Thin Solid Films. [Online] 518 (9). p.2357-2360. Available from: [Accessed 22/10/2009]
Journal: Thin Solid Films
Type of Journal: With a review process (peer review)
Access scheme: Publicly accessible
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
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