Please use this identifier to cite or link to this item: http://hdl.handle.net/11400/8250
Title: Thermally stimulated detrapping in porous silicon
Authors: Αναστασιάδης, Κίμων
Τριάντης, Δήμος Α.
Item type: Journal article
Keywords: Porous silicon;Thermally stimulated discharge currents;Traps;Πορώδες πυρίτιο;Παγίδες;Θερμικά τονωμένα ρεύματα απαλλαγής
Subjects: Technology
Electrical engineering
Τεχνολογία
Ηλεκτρολογία Μηχανολογία
Issue Date: 5-Apr-2015
14-Jan-2000
Date of availability: 5-Apr-2015
Publisher: Elsevier
Abstract: A thermally stimulated current (TSC) methodology has been used to reveal the mechanisms of detrapping in porous Si (C. Bucci, R. Fieschi, G. Guidi, Phys. Rev. 148 (1966) 816). This thermally stimulated method consists of electrically polarizing a sample at temperature, T0, which is depolarized consequently during heating, giving rise to a depolarization or trap-discharge displacement current which can be recorded. When double layer dielectric-semiconductor materials such as porous silicon on a heavily doped silicon substrate are subjected to an electret formation cycle, charge trapping may easily occur. This is explained by the fact that the heterogeneity at the interface between Si and PSi is the source of numerous discontinuities and imperfections in the Si crystal in addition to those existing in the porous layer, all of which are capable of capturing electric carriers because the transition region near the interface may also produce new allowed electron states in the bandgap. The electrical behaviour of the whole material is affected by such an internal structure which is mostly similar to an extended semiconductor surface due to its pores (R.C. Anderson, R.S. Muller, C.W. Tobias, J. Electrochem. Soc. 138 (1991) 3406). Thus, one may state that the electrical properties of PSi are close to those of a surface dominated semiconductor. In the present work an attempt has been made to calculate the activation energy of hole traps within porous Si.
Language: English
Citation: ANASTASIADIS, C. & TRIANTIS, D.A. (2000). Thermally stimulated detrapping in porous silicon. Materials Science and Engineering. [Online] 69-70. p.149-151. Available from: http://www.sciencedirect.com/ [Accessed 25/10/2000]
Journal: Materials Science and Engineering
Type of Journal: With a review process (peer review)
Access scheme: Publicly accessible
License: Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
URI: http://hdl.handle.net/11400/8250
Appears in Collections:Δημοσιεύσεις

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